Author:
Ranuárez Juan C.,Deen M.J.,Chen Chih-Hung
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference83 articles.
1. Design of ion-implanted MOSFET’s with very small physical dimensions;Dennard;IEEE J Solid-State Circ,1974
2. International technology roadmap for semiconductors, 2004 Update. Available from: .
3. Gate tunnel current in an MOS transistor;Majkusiak;IEEE Trans Electron Dev,1990
4. Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFET’s;Momose;IEDM Tech Dig,1994
5. End of Moore’s law: thermal (noise) death of integration in micro and nano electronics;Kish;Phys Lett A,2002
Cited by
141 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献