Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3605253
Reference16 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
3. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
4. Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum Wells
5. Luminescence from stacking faults in gallium nitride
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1. Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs;Journal of Luminescence;2023-05
2. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06
3. Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions;physica status solidi (b);2022-02-23
4. Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices;Journal of Applied Physics;2020-05-14
5. Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes;Scientific Reports;2019-07-05
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