Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes-Reference-Cited by-同舟云学术

Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes

Published:2019-07-05 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Zhang Y.,Smith R. M.^ORCID,Jiu L.,Bai J.^ORCID,Wang T.

Funder

RCUK | Engineering and Physical Sciences Research Council

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-46292-8.pdf

Reference25 articles.

1. Auf der Maur, M., Pecchia, A., Penazzi, G., Rodrigues, W. & Di Carlo, A. Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations. Phys. Rev. Lett. 116(2), 027401 (2016).

2. Rajbhandari, S. et al. A Review of Gallium Nitride LEDs for Multi-Gigabit-per-Second Visible Light Data Communications. Semicond. Sci. Technol. 32(2), 023001 (2017).

3. Funato, M. et al. Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20–21} GaN Substrates. Appl. Phys. Express 3(2), 021002 (2010).

4. Liu, B. et al. Temporally and Spatially Resolved Photoluminescence Investigation of (11–22) Semi-Polar InGaN/GaN Multiple Quantum Wells Grown on Nanorod Templates. Appl. Phys. Lett. 105(26), 261103 (2014).

5. Funato, M. & Kawakami, Y. Excitonic Properties of Polar, Semipolar, and Nonpolar InGaN∕GaN Strained Quantum Wells with Potential Fluctuations. J. Appl. Phys. 103(9), 093501 (2008).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-powered image array composed of touch-free sensors fabricated with semiconductor nanowires;Materials Horizons;2022

2. Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure;Semiconductors;2021-07

3. Crystal quality and surface structure tuning of semi-polar (11–22) GaN on m-plane sapphire via in-situ multiple ammonia treatment;Thin Solid Films;2020-03