Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4707936
Reference26 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. STM study of initial stage of Ge epitaxy on Si(001)
3. Nucleation of ``Hut'' Pits and Clusters during Gas-Source Molecular-Beam Epitaxy of Ge/Si(001) inIn SituScanning Tunnelng Microscopy
4. Effect of Strain on the Appearance of Subcritical Nuclei of Ge Nanohuts on Si(001)
5. Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)
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1. Evolution of Ge wetting layers growing on smooth and rough Si (0 0 1) surfaces: Isolated {1 0 5} facets as a kinetic factor of stress relaxation;Applied Surface Science;2023-01
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3. Silicon-germanium and platinum silicide nanostructures for silicon based photonics;SPIE Proceedings;2017-05-30
4. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures;Advances in Semiconductor Nanostructures;2017
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