Nucleation of ``Hut'' Pits and Clusters during Gas-Source Molecular-Beam Epitaxy of Ge/Si(001) inIn SituScanning Tunnelng Microscopy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.78.3959/fulltext
Reference15 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Island formation in Ge/Si epitaxy
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5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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