STM study of initial stage of Ge epitaxy on Si(001)
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Raman scattering involving umklapp processes inSiGexSi1−xsuperlattices
2. Heterostructure bipolar transistors and integrated circuits
3. Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy
4. Study of ultra-thin Ge/Si strained layer superlattice
5. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
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1. Evolution of Ge wetting layers growing on smooth and rough Si (0 0 1) surfaces: Isolated {1 0 5} facets as a kinetic factor of stress relaxation;Applied Surface Science;2023-01
2. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C;Nanoscale Research Letters;2015-07-16
3. Ge/Si Heterostructures with Dense Chains of Stacked Quantum Dots;Journal of Nanoelectronics and Optoelectronics;2014-04-01
4. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer;Journal of Applied Physics;2013-09-14
5. Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer;Journal of Applied Physics;2012-05
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