Ge/Si Heterostructures with Dense Chains of Stacked Quantum Dots-Reference-Cited by-同舟云学术

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Ge/Si Heterostructures with Dense Chains of Stacked Quantum Dots

Published:2014-04-01 Issue:2 Volume:9 Page:196-218
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Yuryev Vladimir A.,Arapkina Larisa V.,Storozhevykh Mikhail S.,Uvarov Oleg V.,Kalinushkin Victor P.

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of Ge wetting layers growing on smooth and rough Si (0 0 1) surfaces: Isolated {1 0 5} facets as a kinetic factor of stress relaxation;Applied Surface Science;2023-01

2. Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low‐temperature MBE‐grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations;Journal of Raman Spectroscopy;2022-02-21

3. Evolution of Ge Wetting Layers Growing on Smooth and Rough Si (001) Surfaces: Isolated {105} Facets as a Kinetic Factor of Stress Relaxation;SSRN Electronic Journal;2022

4. The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy;Semiconductor Science and Technology;2020-03-05

5. Silicon-germanium and platinum silicide nanostructures for silicon based photonics;SPIE Proceedings;2017-05-30

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