Effect of Strain on the Appearance of Subcritical Nuclei of Ge Nanohuts on Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.95.025501/fulltext
Reference26 articles.
1. Nucleation of ``Hut'' Pits and Clusters during Gas-Source Molecular-Beam Epitaxy of Ge/Si(001) inIn SituScanning Tunnelng Microscopy
2. Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
3. In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)
4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
5. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
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1. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism;Advances in Semiconductor Nanostructures;2017
2. Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study;Applied Surface Science;2017-01
3. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C;Nanoscale Research Letters;2015-07-16
4. Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth;Journal of Physics: Condensed Matter;2015-05-28
5. Ge/Si Heterostructures with Dense Chains of Stacked Quantum Dots;Journal of Nanoelectronics and Optoelectronics;2014-04-01
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