Thermally stimulated current studies on neutron irradiation induced defects in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2190446
Reference26 articles.
1. Influence of photoexcitation on hopping conduction in neutron‐transmutation‐doped GaAs
2. Quenching phenomenon of hopping conduction in neutron-transmutation-doped semi-insulating GaAs
3. Depth uniformity of electrical properties and doping limitation in neutron‐transmutation‐doped semi‐insulating GaAs
4. Defect Donor and Acceptor in GaN
5. Electron-irradiation-induced deep level in n-type GaN
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1. Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes;Microelectronics Reliability;2021-10
2. Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation;Applied Physics Letters;2021-09-27
3. Gamma-ray induced photo emission from GaN single crystal wafer;Applied Physics Letters;2021-01-18
4. Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate;Semiconductor Science and Technology;2018-08-07
5. Research trend in thermally stimulated current method for development of materials and devices in Japan;Japanese Journal of Applied Physics;2018-02-13
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