Electron-irradiation-induced deep level in n-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120783
Reference16 articles.
1. Emerging gallium nitride based devices
2. GaN, AlN, and InN: A review
3. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
4. Towards the Identification of the Dominant Donor in GaN
5. The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy
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