Author:
Tran Thien Duc,Le Thi Hai Thanh
Abstract
Bulk GaN was irradiated by 2 MeV electron beam at a fluence of 5 × 1016 cm2 and studied by deep level transient spectroscopy (DLTS). After irradiation, a broad peak, including at least two traps, was detected. The trap D1 (EC – 0.16 eV) observed from a broad peak is induced during the annealing process below 550K and completely annealed out at 550K after ~ 10 hours. The annealing process at 550K also forms a new trap D2 (EC – 0.25 eV). From the isothermal study the activation energy of the trap D2 in the annihilation process is obtained and has a value of 1.3 ± 0.3 eV. The pre-factor of the annihilation process suggested this process to be related to the free-carrier capture by multi-phonon emission. From the thermal behavior, the trap D2 was suggested to be related to gallium vacancy.
Publisher
Publishing House for Science and Technology, Vietnam Academy of Science and Technology (Publications)
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