Depth uniformity of electrical properties and doping limitation in neutron‐transmutation‐doped semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345303
Reference20 articles.
1. Phosphorus doping of silicon by means of neutron irradiation
2. Application of thermal neutron irradiation for large scale production of homogeneous phosphorus doping of floatzone silicon
3. Transmutation doping of GaAs by thermal neutrons
4. Doping of semi‐insulating andn‐type GaAs by neutron transmutation
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