Gamma-ray induced photo emission from GaN single crystal wafer
Author:
Affiliation:
1. Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584, Japan
2. Institute for Integrated Radiation and Nuclear Science, Kyoto University, Kumatori, Osaka 590-0494, Japan
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0031098
Reference14 articles.
1. Radiation hardness of gallium nitride
2. γ‐ray enhanced quenching phenomenon of photoconductance in undoped and In‐doped semi‐insulating GaAs
3. Evaluation of Scintillation Properties of GaN
4. Thermally stimulated current studies on neutron irradiation induced defects in GaN
5. Proton irradiation induced defects in GaN: Rutherford backscattering and thermally stimulated current studies
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