Quenching phenomenon of hopping conduction in neutron-transmutation-doped semi-insulating GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.3473/fulltext
Reference21 articles.
1. Infrared absorption properties of theEL2 and the isolatedAsGadefects in neutron-transmutation-doped GaAs: Generation of anEL2-like defect
2. Photoelectric memory effect in GaAs
3. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
4. Quenching and recovery spectra of midgap levels (EL2) in semi‐insulating GaAs measured by double‐beam photoconductivity
5. Identification of a defect in a semiconductor:EL2 in GaAs
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