Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation-Reference-Cited by-同舟云学术

Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Published:2021-09-27 Issue:13 Volume:119 Page:133503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Ruize¹²^ORCID,Chen Xinghuan¹,Liu Chao¹³,Chen Wanjun¹²^ORCID,Zhang Bo¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

2. Institute of Electronic and Information Engineering of UESTC in Guangdong, Dongguan 523808, China

3. Chongqing Institute of Microelectronics Industry Technology of UESTC, Chongqing 401332, China

Funder

Special Project for Research and Development in Key areas of Guangdong Province

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0065046

Reference29 articles.

1. Measurements of Energetic Particle Radiation in Transit to Mars on the Mars Science Laboratory

2. Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors

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5. Threshold defect production in silicon determined by density functional theory molecular dynamics simulations

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