Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103761
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1. An Anomalous Effect in Angle Lapping and Staining Ion‐Implanted Layers
2. Lattice Damage, Boron Diffusion, and Dopant Activation in BF 2 Implanted Layers
3. Between carrier distributions and dopant atomic distribution in beveled silicon substrates
4. Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures
5. Recent Developments in the Interpretation of Spreading Resistance Profiles for VLSI‐Technology
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