Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy-Reference-Cited by-同舟云学术

Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy

Published:2020-02-07 Issue:5 Volume:127 Page:055703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Prüßing Jan K.¹^ORCID,Böckendorf Tim¹,Hamdana Gerry²,Peiner Erwin²^ORCID,Bracht Hartmut¹^ORCID

Affiliation:

1. Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germany

2. Institute of Semiconductor Technology (IHT) and Laboratory of Emerging Nanometrology (LENA), Technische Universität Braunschweig, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5134558

Reference29 articles.

1. Metrology and Diagnostic Techniques for Nanoelectronics

2. Effect of the Si nanowire’s diameter and doping profile on the electrical characteristics of gate-all-around twin Si-nanowire field-effect transistors

3. 1-nm Spatial Resolution in Carrier Profiling of Ultrashallow Junctions by Scanning Spreading Resistance Microscopy

4. Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

5. Observation of diameter dependent carrier distribution in nanowire-based transistors

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