Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy-Reference-Cited by-同舟云学术

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Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

Published:2009-12-16 Issue:1 Volume:10 Page:171-175
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ou Xin¹²³,Kanungo Pratyush Das¹,Kögler Reinhard²,Werner Peter¹,Gösele Ulrich¹,Skorupa Wolfgang²,Wang Xi³

Affiliation:

1. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120, Germany

2. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf e.V., P.O. Box 510119, 01314 Dresden, Germany

3. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl903228s

Reference34 articles.

1. SEMICONDUCTOR NANOWIRES AND NANOTUBES

2. Toward Nanowire Electronics

3. Doping and Electrical Transport in Silicon Nanowires

4. Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

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