Defects in Semiconductors
Author:
Affiliation:
1. Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814, USA
2. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0012677
Reference57 articles.
1. Characterisation and Control of Defects in Semiconductors
2. A comprehensive theoretical picture of E centers in silicon: From optical properties to vacancy-mediated dopant diffusion
3. The Cu photoluminescence defect and the early stages of Cu precipitation in Si
4. Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon
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