A comprehensive theoretical picture of E centers in silicon: From optical properties to vacancy-mediated dopant diffusion
Author:
Affiliation:
1. CEA, DAM, DIF, F-91297 Arpajon, France
2. LAAS-CNRS, Université de Toulouse, CNRS, Toulouse, France
3. CNR-IOM/Democritos National Simulation Center, Istituto Officina dei Materiali, c/o SISSA, via Bonomea 265, IT-34136 Trieste, Italy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5140724
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1. Further measurements of random telegraph signals in proton irradiated CCDs
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4. Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors
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