First-principles investigation of the trivacancy capture cross-section in silicon-Reference-Cited by-同舟云学术

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First-principles investigation of the trivacancy capture cross-section in silicon

Published:2024-09 Issue: Volume:244 Page:113226
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Pelenitsyn Vladislav^ORCID,Korotaev Pavel^ORCID

Funder

Russian Science Foundation

Publisher

Elsevier BV

Reference56 articles.

1. Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices;Claeys,2002

2. Metastable and bistable defects in silicon;Mukashev;Phys.-Usp.,2000

3. Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques;Markevich;J. Appl. Phys.,2018

4. 35 Years of defects in semiconductors: What next?;Watkins,1993

5. Defect metastability and bistability;Watkins,1989

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