Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques-Reference-Cited by-同舟云学术

Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques

Published:2018-12-14 Issue:22 Volume:124 Page:225703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Markevich V. P.¹^ORCID,Vaqueiro-Contreras M.¹,Lastovskii S. B.²,Murin L. I.²,Halsall M. P.¹^ORCID,Peaker A. R.¹^ORCID

Affiliation:

1. Photon Science Institute, School of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, United Kingdom

2. Scientific-Practical Materials Research Center of the National Academy of Sciences of Belarus, Minsk 220072, Belarus

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5053805

Reference37 articles.

1. Electrical and Optical Properties of Heat-Treated Silicon

2. Electrical and infrared spectroscopic investigations of oxygen-related donors in silicon

3. R. Oeder and P. Wagner, in Defects in Semiconductors II, edited by S. Mahajan and J. W. Corbett (Materials Research Society Symposia Proceedings, 1982), Vol. 14, p. 171.

4. Spectroscopic studies of 450° C thermal donors in silicon

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