Role of F on the Electrical Activation of As in Ge-Reference-Cited by-同舟云学术

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Role of F on the Electrical Activation of As in Ge

Published:2012 Issue:3 Volume:1 Page:Q44-Q46
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Impellizzeri G.,Napolitani E.,Boninelli S.,Sullivan J. P.,Roberts J.,Buckman S. J.,Ruffell S.,Priolo F.,Privitera V.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Claeys C. Simoen E. , Germanium-Based Technologies - From Materials to Devices (Elsevier, Amsterdam, 2007).

2. Defect engineering aspects of advanced Ge process modules

3. Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

4. Vacancy-arsenic clusters in germanium

5. Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Seventy-Five Years since the Point-Contact Transistor: Germanium Revisited;Applied Sciences;2022-11-24

2. Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results;Applied Sciences;2019-06-15

3. Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique;Journal of Applied Physics;2018-04-28

4. Challenges in ultra-shallow junction technology;CMOS Past, Present and Future;2018

5. Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy;Materials Science in Semiconductor Processing;2017-05

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