Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy-Reference-Cited by-同舟云学术

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Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy

Published:2017-05 Issue: Volume:62 Page:205-208
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Sanson A.,El Mubarek H.A.W.,Gandy A.S.,De Salvador D.,Napolitani E.,Carnera A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Academic and industry research progress in germanium nanodevices

2. ITRS 2013, 〈http://www.itrs.net/〉

3. Mechanisms of boron diffusion in silicon and germanium

4. Vacancy-arsenic clusters in germanium

5. Diffusion of E centers in germanium predicted using GGA+U approach

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results;Applied Sciences;2019-06-15

2. Toward Defect Engineering Strategies to Optimize Energy and Electronic Materials;Applied Sciences;2017-06-30

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