Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique-Reference-Cited by-同舟云学术

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

Published:2018-04-28 Issue:16 Volume:123 Page:161524
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Monmeyran Corentin¹^ORCID,Crowe Iain F.²^ORCID,Gwilliam Russell M.³^ORCID,Heidelberger Christopher¹^ORCID,Napolitani Enrico⁴^ORCID,Pastor David⁵,Gandhi Hemi H.⁵,Mazur Eric⁵,Michel Jürgen⁶,Agarwal Anuradha M.⁶^ORCID,Kimerling Lionel C.¹⁶

Affiliation:

1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139, USA

2. Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom

3. Ion Beam Centre, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom

4. Dipartimento di Fisica e Astronomia, Università di Padova and CNR-IMM, Via, Marzolo 8, Padova I-35131, Italy

5. Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA

6. Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139, USA

Funder

Directed Energy Processing Society Graduate Fellowship

program Ramon y Cajal

Programa Nacional de movilidad de recursos humanosdel Plan Nacional

US Air Force Office of Scientific Research

U.S. Department of Defense

DOD | Defense Threat Reduction Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4999210

Reference38 articles.

1. An electrically pumped germanium laser

2. Electrically pumped lasing from Ge Fabry-Perot resonators on Si

3. In Situ Phosphorus Doping of Germanium by APCVD

4. Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

5. High active carrier concentration in n-type, thin film Ge using delta-doping

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