Defect engineering aspects of advanced Ge process modules

Author:

Claeys C.,Simoen E.,Opsomer K.,Brunco D.P.,Meuris M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

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4. Germanium-based Technologies: From Materials to Devices,2007

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3. Defect evolution and dopant activation in laser annealed Si and Ge;Materials Science in Semiconductor Processing;2016-02

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