(Invited) Status and Trends in Ge CMOS Technology

Abstract

Since the last decade there has been renewed interest in Ge-based technologies for deep submicron CMOS technologies. Whereas good performance data has been reported for p-channel MOSFETs this was not the case for the n-channel counterpart. This manuscript first reviews some key technological aspects for Ge processing, before outlining the status and trends for p-and n-channel Ge MOSFETs in relation to the ITRS specifications. Special attention will be given to GeSn technologies.