Between carrier distributions and dopant atomic distribution in beveled silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330648
Reference9 articles.
1. Calculation of spreading resistance correction factors
2. The influence of temperature on spreading resistance measurement
3. Interactions in Sequential Diffusion Processes in Semiconductors
4. Simplified Expression for the Distribution of Diffused Impurity
5. Analytical solution of Fick's second law when the diffusion coefficient varies directly as concentration
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