Recent Developments in the Interpretation of Spreading Resistance Profiles for VLSI‐Technology

Author:

Vandervorst W.1,Clarysse T.1

Affiliation:

1. IMEC vzw, Kapeldreef 75, B‐3030 Leuven, Belgium

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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1. Etching Processes in Semiconductor Manufacturing;Materials Science and Technology;2013-02-15

2. Characterization of electrically active dopant profiles with the spreading resistance probe;Materials Science and Engineering: R: Reports;2004-12-31

3. Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures;Japanese Journal of Applied Physics;2000-02-15

4. Formation of deep p-n junctions in p-type Czochralski grown silicon by hydrogen plasma treatment;Applied Physics A: Materials Science & Processing;1998-04-01

5. Quantification of nanospreading resistance profiling data;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01

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