Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural study and ion-beam channelling in Si 〈1 0 0〉 modified by Kr+, Ag+, 2+ and Au+, 2+ ions;Applied Surface Science;2018-11
2. Role of the Si∕SiO2 interface during dopant diffusion in thin silicon on insulator layers;Journal of Applied Physics;2006-11
3. Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator;Materials Science and Engineering: B;2004-12
4. Effects of buried oxide layer on indium diffusion in separation by implantation of oxygen;Journal of Applied Physics;2004-09-15
5. Secondary defect formation in bonded silicon-on-insulator after boron implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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