Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure-Reference-Cited by-同舟云学术

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Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

Published:2015-04-06 Issue:14 Volume:106 Page:143503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Laroche D.¹,Huang S.-H.²³,Nielsen E.¹,Liu C. W.²³,Li J.-Y.²³,Lu T. M.¹

Affiliation:

1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

2. Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 10617, Taiwan

3. National Nano Device Laboratories, Hsinchu 30077, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Basic Energy Sciences (BES)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4917296

Reference25 articles.

1. A one-dimensional SiGe superlattice grown by UHV epitaxy

2. High-mobility Si and Ge structures

3. Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs

4. Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures

5. Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical gate-defined double quantum dot in a strained germanium double quantum well;Physical Review Applied;2023-11-16

2. Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials;Journal of Physics D: Applied Physics;2022-06-24

3. A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well;Advanced Quantum Technologies;2022-03-25

4. Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure;Applied Physics Letters;2021-11-29

5. Electric field induced non-linear multisubband electron mobility in V-shaped asymmetric double quantum well structure;Philosophical Magazine;2019-12-01

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