Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure-Reference-Cited by-同舟云学术

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Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

Published:2021-11-29 Issue:22 Volume:119 Page:223103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen D.¹,Cai S.¹,Hsu N.-W.²,Huang S.-H.²,Chuang Y.²,Nielsen E.³,Li J.-Y.²⁴^ORCID,Liu C. W.²^ORCID,Lu T. M.³^ORCID,Laroche D.¹^ORCID

Affiliation:

1. Department of Physics, University of Florida, Gainesville, Florida 32611, USA

2. Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 10617, Taiwan

3. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

4. Taiwan Semiconductor Research Institute, Hsinchu 30078, Taiwan

Funder

Division of Materials Research

Institute for Information Industry, Ministry of Science and Technology, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0068538

Reference49 articles.

1. Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs

2. Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors

3. Tilted magnetic field studies of spin- and valley-splittings in Si/Si1 − xGex heterostructures

4. The critical role of substrate disorder in valley splitting in Si quantum wells

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