Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors-Reference-Cited by-同舟云学术

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Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors

Published:2012-03-30 Issue:12 Volume:85 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lu T. M.,Pan W.,Tsui D. C.,Lee C.-H.,Liu C. W.

Funder

National Science Foundation

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.121307/fulltext

Reference33 articles.

1. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance

2. Two-Dimensional Magnetotransport in the Extreme Quantum Limit

3. Experimental studies of the fractional quantum Hall effect in the first excited Landau level

4. Composite-fermion approach for the fractional quantum Hall effect

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1. High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells;Applied Physics Letters;2024-05-27

2. Quantum Hall valley ferromagnets as a platform for topologically protected quantum memory;Physical Review B;2023-03-30

3. Cryogenic Si/SiGe Heterostructure Flash Memory Devices;ACS Applied Electronic Materials;2022-06-15

4. Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure;Applied Physics Letters;2021-11-29

5. A non-invasive gating method for probing 2D electron systems on pristine, intrinsic H-Si(111) surfaces;Applied Physics Letters;2020-10-12

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