Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4739513
Reference17 articles.
1. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
2. High-mobility Si and Ge structures
3. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
4. Electronic properties of two-dimensional systems
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