On the driving force for recombination-induced stacking fault motion in 4H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3467793
Reference34 articles.
1. Silicon Carbide Electronic Materials and Devices
2. Degradation of hexagonal silicon-carbide-based bipolar devices
3. K. Maeda and S. Takeuchi, inDislocations in Solids, edited by F. R. N. Nabarro and M. S. Duesbery (North-Holland, Amsterdam, 1996), Vol. 10, p. 443.
4. Recombination-Induced Stacking Faults: Evidence for a General Mechanism in Hexagonal SiC
5. Driving Force of Stacking-Fault Formation in SiCp−i−nDiodes
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