Driving Force of Stacking-Fault Formation in SiCp−i−nDiodes
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.92.175504/fulltext
Reference21 articles.
1. Intercalation of nitrogenous substances into HUO2PO4·4H2O
2. Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
3. SiC Power Devices: How to be Competitive towards Si-Based Solutions?
4. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
5. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
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2. Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions;Journal of Applied Physics;2021-06-21
3. Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC;Japanese Journal of Applied Physics;2021-05-13
4. Phase field model of single Shockley stacking fault expansion in 4H-SiC PiN diode;Japanese Journal of Applied Physics;2021-02-01
5. Defect engineering in SiC technology for high-voltage power devices;Applied Physics Express;2020-11-26
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