Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions-Reference-Cited by-同舟云学术

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Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions

Published:2021-06-21 Issue:23 Volume:129 Page:235703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Pei¹^ORCID,Yan Xiaolan¹^ORCID,Chen Jiabin¹,Dong Peng²^ORCID,Huang Bing¹³^ORCID

Affiliation:

1. Beijing Computational Science Research Center, Beijing 100193, China

2. Microsystem and Terahertz Research Center and Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China

3. Department of Physics, Beijing Normal University, Beijing 100875, China

Funder

the Science Challenge Project

NSFC

NSAF

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0051942

Reference62 articles.

1. Carrier mobilities in silicon empirically related to doping and field

2. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

3. Performance limiting surface defects in SiC epitaxial p-n junction diodes

4. Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes

5. Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation;Nanomaterials;2023-07-28

2. Analyzing the synchronism of stacking-fault formation in side-by-side SiC nanowire pairs using the Levenshtein distance: stochastic versus deterministic processes;Microscopy;2022-12-28

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