Insight into unusual impurity absorbability of GeO2 in GeO2/Ge stacks-Reference-Cited by-同舟云学术

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Insight into unusual impurity absorbability of GeO2 in GeO2/Ge stacks

Published:2011-10-03 Issue:14 Volume:99 Page:142101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ogawa Shingo,Suda Taichi,Yamamoto Takashi,Kutsuki Katsuhiro,Hideshima Iori,Hosoi Takuji,Shimura Takayoshi,Watanabe Heiji

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3644393

Reference14 articles.

1. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

2. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study

3. Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference

4. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics

5. Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of excitation wavelength and silver concentration on the biosynthesized GeO ₂ nanocrystals;Inorganic and Nano-Metal Chemistry;2024-06

2. Degradation of Pt-Al2O3-Ge Metal Oxide Semiconductor Structures due to Pt-Al2O3 Induced Reactions;ECS Journal of Solid State Science and Technology;2020-01-17

3. Angle-resolved x-ray photoelectron spectroscopy study of GeO x growth by plasma post-oxidation;Chinese Physics B;2017-09

4. (Invited) Reactivity of Water Vapor with Ultrathin GeO2/Ge and SiO2/Si Structures Investigated by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy;ECS Transactions;2017-08-15

5. Formation of strontium-yttrium germanium anionic lacunar apatite (Sr2+Y6.67+(2/3)[GeO4]6O2) as the intermediate phase of oxygen-rich yttrium-germanium apatite (Y9.333+ε[GeO4]6O2+3/2ε);Ceramics International;2017-07

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