Degradation of Pt-Al2O3-Ge Metal Oxide Semiconductor Structures due to Pt-Al2O3 Induced Reactions-Reference-Cited by-同舟云学术

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Degradation of Pt-Al2O3-Ge Metal Oxide Semiconductor Structures due to Pt-Al2O3 Induced Reactions

Published:2020-01-17 Issue:2 Volume:9 Page:024003
ISSN:2162-8777
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Ioannou-Sougleridis Vassilios,Alafakis Stamatios,Vouroutzis Nikolaos Z.,Mergia Konstantina,Speliotis Athanassios,Skarlatos Dimitrios

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/ab682e/pdf

Reference39 articles.

1. Germanium channel MOSFETs: Opportunities and challenges

2. Switching channels

3. Germanium CMOS potential from material and process perspectives: Be more positive about germanium

4. (Invited) Issues with n-type Dopants in Germanium

5. Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photodetectors based on chemical vapor deposition or liquid processed multi-wall carbon nanotubes;Optical Materials;2023-09

2. Post-metallization annealing and photolithography effects in p-type Ge/Al₂O₃/Al MOS structures;ECS Journal of Solid State Science and Technology;2022-04-01

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