Interface control and leakage current conduction mechanism in HfO2 film prepared by pulsed laser deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3033526
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2. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
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5. Influence of charged particle bombardment and sputtering parameters on the properties of HfO 2 films prepared by dc reactive magnetron sputtering
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