Structural, morphological, and metal-oxide-semiconductor characteristics of thulium oxide passivation layer grown in nitrogen-oxygen-nitrogen ambient-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Structural, morphological, and metal-oxide-semiconductor characteristics of thulium oxide passivation layer grown in nitrogen-oxygen-nitrogen ambient

Published:2023-04 Issue: Volume:35 Page:e00534
ISSN:2214-9937
Container-title:Sustainable Materials and Technologies
language:en
Short-container-title:Sustainable Materials and Technologies

Author:

Deng Junchen,Quah Hock Jin

Funder

Ministry of Higher Education, Malaysia

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Waste Management and Disposal,General Materials Science,Renewable Energy, Sustainability and the Environment

Reference64 articles.

1. High dielectric constant oxides;Robertson;Eur. Phys. J. Appl. Phys.,2006

2. High-K materials and metal gates for CMOS applications;Robertson;Mater. Sci. Eng. R. Rep.,2015

3. High-k gate dielectrics: current status and materials properties considerations;Wilk;J. Appl. Phys.,2001

4. Characterization and control of the HfO2/Si(001) interfaces;Hoshino;Appl. Phys. Lett.,2002

5. Chemical deposition of Al2O3 thin films on Si substrates;Vitanov;Thin Solid Films,2009

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of surface morphology, optical properties and the gamma radiation effect on selenium coated glass substrate containing rare earth oxide;Optical Materials;2023-06

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP