Characterization and control of the HfO2/Si(001) interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1510941
Reference10 articles.
1. Structure and stability of ultrathin zirconium oxide layers on Si(001)
2. Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
3. High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering
4. Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications
5. Properties of HfO2/Hf-Silicate/Si Structures with Hf-Silicate Formed by Hf Metal Deposition and Subsequent Reaction
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