Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1403678
Reference20 articles.
1. Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application
2. Variation in the fixed charge density of SiO[sub x]/ZrO[sub 2] gate dielectric stacks during postdeposition oxidation
3. Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)
4. Hafnium and zirconium silicates for advanced gate dielectrics
5. Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application
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2. Ultrathin Eu- and Er-Doped Y2O3 Films with Optimized Optical Properties for Quantum Technologies;The Journal of Physical Chemistry C;2019-05-03
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4. Growth mechanism of epitaxial YSZ on Si by Pulsed Laser Deposition;Scientific Reports;2018-04-10
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