Growth of highly oriented HfO2 thin films of monoclinic phase on yttrium-stabilized ZrO2 and Si substrates by pulsed-laser deposition-Reference-Cited by-同舟云学术

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Growth of highly oriented HfO2 thin films of monoclinic phase on yttrium-stabilized ZrO2 and Si substrates by pulsed-laser deposition

Published:2005-12-12 Issue:24 Volume:87 Page:241504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dhar S.,Ramachandra Rao M. S.,Ogale S. B.,Kundaliya Darshan C.,Shinde S. R.,Venkatesan T.,Welz S. J.,Erni R.,Browning N. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2142088

Reference22 articles.

1. SrTiO3-based metal–insulator–semiconductor heterostructures

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Semiconductor Industry Association,2001

4. Dielectric property and thermal stability of HfO2 on silicon

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1. Preparation and magnetic properties of DC-sputtered porous HfO2 films;Ceramics International;2016-12

2. Stabilization of cubic structure in Mn-doped hafnia;Ceramics International;2012-04

3. Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films;Chinese Physics Letters;2010-02

4. Interface control and leakage current conduction mechanism in HfO2 film prepared by pulsed laser deposition;Applied Physics Letters;2008-11-17

5. Influence of deposition temperature on the structure and optical properties of HfO2 thin films;Frontiers of Materials Science in China;2008-09-19

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