Influence of charged particle bombardment and sputtering parameters on the properties of HfO 2 films prepared by dc reactive magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference10 articles.
1. Field-emission display based on nonformed MIM-cathode array
2. Electron energy distribution rebuilding at the insulator–semiconductor interface in AC thin film electroluminescent and field emission display devices
3. Influence of annealing condition on the properties of sputtered hafnium oxide
4. Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (100)
5. Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application
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3. Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium;Materials Research Bulletin;2015-10
4. Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics;Journal of Materials Science: Materials in Electronics;2014-07-09
5. The optical properties of hydrophilic Hf-doped HfO2 nanoceramic films;Ceramics International;2013-09
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