Influence of annealing condition on the properties of sputtered hafnium oxide-Reference-Cited by-同舟云学术

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Influence of annealing condition on the properties of sputtered hafnium oxide

Published:2002-05 Issue:1 Volume:303 Page:139-143
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Nam Seok-Woo,Yoo Jung-Ho,Nam Suheun,Choi Hyo-Jick,Lee Dongwon,Ko Dae-Hong,Moon Joo Ho,Ku Ja-Hum,Choi Siyoung

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

2. Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems

3. Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

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1. Characterizing graphene/HfO2 and HfO2/graphene interfaces through Raman spectroscopy analysis;Optical and Quantum Electronics;2023-11-10

2. Annealing for controlled galinstan oxide thin-film morphological and electromechanical properties;MRS Communications;2022-11-16

3. Water effect in the synthesis of nanostructured thin films of HfO2 deposited by the ultrasonic spray pyrolysis technique;Revista Mexicana de Física;2021-09-01

4. Effects of annealing on quality and stoichiometry of HfO2 thin films grown by RF magnetron sputtering;Vacuum;2018-09

5. Role of annealing temperature on charge storage characteristics of Au nanocrystals with HfO2 tunneling and blocking layers;Superlattices and Microstructures;2018-08

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