Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107788
Reference18 articles.
1. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
2. Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm
3. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy
4. Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers
5. Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness
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1. Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells;Applied Physics Letters;2013-12-16
2. The influence of tensile strain on differential gain and Auger recombination in 1.5-μm multiple-quantum-well lasers;IEEE Journal of Quantum Electronics;1998-05
3. Theoretical analysis of the influence of the barrier composition on properties of GaInAs/GaInAsP/GaInP laser diodes;IEE Proceedings - Optoelectronics;1995-02-01
4. Contactless electromodulation for the nondestructive, room-temperature analysis of wafer-sized semiconductor device structures;IEEE Journal of Selected Topics in Quantum Electronics;1995
5. Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers;Journal of Applied Physics;1994-10-15
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