Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357279
Reference29 articles.
1. Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers
2. Low‐threshold InGaAs strained‐layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy
3. Optical gain anisotropy in serpentine superlattice nanowire‐array lasers
4. High‐efficiency and low‐threshold InGaAs/AlGaAs quantum‐well lasers
5. High speed quantum-well lasers and carrier transport effects
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