Phase separation and electronic structure of Hf-silicate film as a function of composition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2143132
Reference14 articles.
1. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
2. Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition
3. High-quality HfSixOy gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal–Hf and SiO2 underlayer
4. Hafnium and zirconium silicates for advanced gate dielectrics
5. Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics
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2. Characterization of the electronic structure and thermal stability of HfO2 /SiO2 /Si gate dielectric stack;Surface and Interface Analysis;2017-03-02
3. Control of the interfacial reaction in HfO2 on Si-passivated GaAs;Applied Surface Science;2013-10
4. Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3(001) as a function of annealing temperature;physica status solidi (a);2013-08-28
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