Characterization of the electronic structure and thermal stability of HfO2 /SiO2 /Si gate dielectric stack-Reference-Cited by-同舟云学术

Characterization of the electronic structure and thermal stability of HfO2 /SiO2 /Si gate dielectric stack

Published:2017-03-02 Issue:8 Volume:49 Page:776-780
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Duan T. L.¹^ORCID,Pan L.²,Zhang Z.³,Tok E. S.⁴,Pan J. S.³⁴

Affiliation:

1. Materials Characterization and Preparation Center; Southern University of Science and Technology; Shenzhen 518055 China

2. School of Power and Mechanical Engineering; Wuhan University; Wuhan 430072 China

3. Institute of Materials Research and Engineering; A*STAR (Agency for Science, Technology and Research); 2 Fusionopolis Way, Innovis, #08-03 Singapore 138634

4. Department of Physics; National University of Singapore; 2 Science Drive 3 Singapore 117551

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.6222/fullpdf

Reference29 articles.

1. K. Iwamoto A. Ogawa Y. Kamimuta Y. Watanabe W. Mizubayashi S. Migita Y. Morita M. Takahashi H. Ito H. Ota T. Nabatame A. Toriumi Symp. VLSI Tech 2007 70 71

2. Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells

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